GE12160CEA3
- Manufacturer:
- GE Aerospace
- Part Number:
- GE12160CEA3
- Category:
- FET, MOSFET Arrays
- Description:
- 1200V 1425A SiC Half-Bridge
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 7,630
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- GE Aerospace
- Category :
- FET, MOSFET Arrays
- Configuration :
- 2 N-Channel (Half Bridge)
- Current - Continuous Drain (Id) @ 25°C :
- 1.425kA (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- Gate Charge (Qg) (Max) @ Vgs :
- 3744nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds :
- 90000pF @ 600V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C ~ 150°C (Tc)
- Package / Case :
- Module
- Power - Max :
- 3.75kW (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.5mOhm @ 475A, 20V
- Supplier Device Package :
- Module
- Technology :
- Silicon Carbide (SiC)
- Vgs(th) (Max) @ Id :
- 4.5V @ 480mA
Request A Quote(RFQ)
please submit the following information
- * Part Number
- Manufacturer
- Quantity
- * Name
- Company
Payment Method
-
The fee is charged according to the rule of HSBC. -
The fee is charged according to the rule of PayPal. -
The fee is charged according to the rule of WESTERN UNION.
Shipping information
-
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country.
.png)
Copyright © 2009-2024 lianyixinic.com . All Rights Reserved.