G800N06S2
- Manufacturer:
- Goford Semiconductor
- Part Number:
- G800N06S2
- Category:
- FET, MOSFET Arrays
- Description:
- N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 3,972
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Goford Semiconductor
- Category :
- FET, MOSFET Arrays
- Configuration :
- 2 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Tc)
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Standard
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 458pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Power - Max :
- 1.7W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 80mOhm @ 3A, 10V
- Supplier Device Package :
- 8-SOP
- Technology :
- MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
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